| PART |
Description |
Maker |
| NGD18N40CLB NGD18N40CLBT4 |
From old datasheet system
Ignition IGBT 18 Amps, 400 Volts
Ignition IGBT 18 A, 400 V, N-Ch DPak with Improved SCIS energy and Vce(on)
|
http://
ON Semiconductor
ONSEMI
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| IRG4BC40S |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.32V @Vge=15V Ic=31A)
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
|
IRF[International Rectifier]
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| IRG4BC10KD IRG4BC10KDPBF |
9 A, 600 V, N-CHANNEL IGBT, TO-220AB
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A)
600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package
|
International Rectifier
|
| IRG4PH50KD IRG4PH50KD-E |
45 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.77V @Vge=15V Ic=24A)
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
| IRG4PH40UD IRG4PH40UD-E |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 1200伏，的Vce（on）典\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条）
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| NGB8202N NGB8202NT4 |
Ignition IGBT 20 A, 400 V, N-Channel D<sup>2</sup>PAK
20 A, 400 V, N-Channel D2PAK
20 A, 400 V, N−Channel D2PAK
|
ONSEMI[ON Semiconductor]
|
| IRG4BC10S IRG4BC10SPBF |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A) 绝缘栅双极晶体管IGBT的标准速度VCES和\u003d 600V电压的Vce（on）typ.1.10V @和VGE \u003d 15V的，集成电路\u003d 2.0安培
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
|
| IRG4PH50U |
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.78V @Vge=15V Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
|
IRF[International Rectifier]
|
| IRG4BC30W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| IRG4PC40S IRG4PC40 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V Vce(on)typ.=1.32V @Vge=15V Ic=31A)
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
